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the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. bipolar analog integrated circuits m m m m pc8106tb, m m m m pc8109tb silicon mmic 2.0 ghz frequency up-converter for cellular/cordless telephones document no. p12770ej2v0ds00 (2nd edition) date published april 1999 n cp(k) printed in japan data sheet 1997, 1999 description the m pc8106tb and m pc8109tb are silicon monolithic integrated circuit designed as frequency up-converter for cellular/cordless telephone transmitter stage. the m pc8106tb features improved intermodulation and m pc8109tb features low current consumption. from these two version, you can chose either ic corresponding to your system design. these tb suffix ics which are smaller package than conventional t suffix ics contribute to reduce your system size. the m pc8106tb and m pc8109tb are manufactured using necs 20 ghz f t nesat tm iii silicon bipolar process. this process uses a silicon nitride passivation film and gold electrodes. these materials can protect chip surface from external pollution and prevent corrosion/migration. thus, this ic has excellent performance, uniformity and reliability. features ? recommended operating frequency : f rfout = 0.4 ghz to 2.0 ghz, f ifin = 100 mhz to 400 mhz ? supply voltage : v cc = 2.7 to 5.5 v ? high-density surface mounting : 6-pin super minimold package ? low current consumption : i cc = 9 ma typ. @ m pc8106tb i cc = 5 ma typ. @ m pc8109tb ? minimized carrier leakage : due to double balanced mixer ? built-in power save function application ? cellular/cordless telephone up to 2.0 ghz max (example: phs, pdc, dcs1800 and so on) ordering information part number markings product type package supplying form m pc8106tb-e3 c2d high ip 3 m pc8109tb-e3 c2g low current consumption 6-pin super minimold embossed tape 8 mm wide. pin 1, 2, 3 face to tape perforation side. qty 3 kp/reel. remark to order evaluation samples, please contact your local nec sales office. (part number for sample order: m pc8106tb, m pc8109tb) caution electro-static sensitive devices
data sheet p12770ej2v0ds00 2 m m m m pc8106tb, m m m m pc8109tb pin connections pin no. pin name 1 ifinput 2gnd 3 loinput 4ps 5v cc 6 rfoutput series products (t a = +25 c, v cc = v ps = v rfout = 3.0 v, z l = z s = 50 w w w w ) type product name v cc (v) i cc (ma) cg1 (db) cg2 (db) p o(sat) 1 (dbm) p o(sat) 2 (dbm) oip 3 1 (dbm) oip 3 2 (dbm) high ip 3 m pc8106tb 2.7 to 5.5 9 9 7 - 2 - 4 +5.5 +2.0 low power consumption m pc8109tb 2.7 to 5.5 5 6 4 - 5.5 - 7.5 +1.5 - 1.0 higher ip 3 m pc8163tb 2.7 to 3.3 16.5 9 5.5 0.5 C2 +9.5 +6 caution the above table lists the typical performance of each model. see electrical character- istics for the test conditions. block diagram (for the m m m m pc8106tb and m m m m pc8109tb) lo input if input rf output ps v cc gnd (top view) 3 2 1 4 5 6 (top view) marking is an example of pc8106tb. 4 5 6 3 2 1 (bottom view) c 2 d m
data sheet p12770ej2v0ds00 3 m m m m pc8106tb, m m m m pc8109tb system application examples (schematics of ic location in the systems) phs, dect tx ? n pll rx pa i q sw demo. q i phase shifter 0? 90? pc8106tb m vco pll analog cellular telephone tx ? n pll rx pa sw demo. pc8109tb m pll mod. fm vco
data sheet p12770ej2v0ds00 4 m m m m pc8106tb, m m m m pc8109tb pin functions (for the m m m m pc8106tb and m m m m pc8109tb) pin no. pin name applied voltage (v) pin voltage (v) note function and explanation equivalent circuit 1 ifinput - 1.3 this pin is if input to double balanced mixer (dbm). the input is designed as high impedance. the circuit contri- butes to suppress spurious signal. also this symmetrical circuit can keep specified performance insensitive to process-condition distribution. for above reason, double balanced mixer is adopted. 2gnd 0 - gnd pin. ground pattern on the board should be formed as wide as possible. track length should be kept as short as possible to minimize ground impedance. 3 loinput - 2.4 local input pin. recommendable input level is - 10 to 0 dbm. 5v cc 2.7 to 5.5 - supply voltage pin. 6 rfoutput same bias as v cc through external inductor - this pin is rf output from dbm. this pin is designed as open collector. due to the high impedance output, this pin should be externally equipped with lc matching circuit to next stage. 5 6 1 2 3 4psv cc /gnd - power save control pin. bias controls operation as follows. v cc gnd 5 4 2 note each pin voltage is measured with v cc = v ps = v rfout = 3.0 v. pin bias control v cc operation gnd power save
data sheet p12770ej2v0ds00 5 m m m m pc8106tb, m m m m pc8109tb absolute maximum ratings parameter symbol test conditions rating unit supply votage v cc t a = +25 c, pin 5 and 6 6.0 v ps pin input voltage v ps t a = +25 c 6.0 v power dissipation of package p d mounted on double-sided copper-clad 50 50 1.6 mm epoxy glass pwb t a = +85 c 200 mw operating ambient temperature t a - 40 to +85 c storage temperature t stg - 55 to +150 c maximum input power p in +10 dbm recommended operating conditions parameter symbol min. typ. max. unit note supply voltage v cc 2.7 3.0 5.5 v the same voltage should be supplied to pin 5 and 6 operating ambient temperature t a - 40 +25 +85 c local input level p loin - 10 - 50dbmz s = 50 w (without matching) rf output frequency f rfout 0.4 - 2.0 ghz with external matching circuit if input frequency f ifin 100 - 400 mhz electrical characteristics (t a = +25 c, v cc = v rfout = 3.0 v, f ifin = 240 mhz, p loin = - - - - 5 dbm, and v ps 3 3 3 3 2.7 v unless otherwise specified) m pc8106tb m pc8109tb parameter symbol conditions min. typ. max. min. typ. max. unit circuit current i cc no signal 4.5 9 13.5 2.5 5 8.0 ma circuit current in power- save mode i cc (ps) v ps = 0 v -- 10 -- 10 m a conversion gain 1 cg1 f rfout = 0.9 ghz, p ifin = - 30 dbm 6 9 12 3 6 9 db conversion gain 2 cg2 f rfout = 1.9 ghz, p ifin = - 30 dbm 4 7 10 1 4 7 db maximum rf output power 1 p o(sat) 1f rfout = 0.9 ghz, p ifin = 0 dbm - 4 - 2 -- 7.5 - 5.5 - dbm maximum rf output power 2 p o(sat) 2f rfout = 1.9 ghz, p ifin = 0 dbm - 6.5 - 4 -- 10 - 7.5 - dbm
data sheet p12770ej2v0ds00 6 m m m m pc8106tb, m m m m pc8109tb other characteristics, for reference purposes only (t a = +25 c, v cc = v rfout = 3.0 v, p loin = - - - - 5 dbm, and v ps 3 3 3 3 2.7 v unless otherwise mentioned) reference value parameter symbol conditions m pc8106tb m pc8109tb unit oip 3 1f ifin1 = 240.0 mhz f rfout = 0.9 ghz +5.5 +1.5 dbm output third-order distortion intercept point oip 3 2f ifin2 = 240.4 mhz f rfout = 1.9 ghz +2.0 - 1.0 third-order intermodulation distortion 1 im 3 1f rfout = 0.9 ghz - 31 - 29 dbc third-order intermodulation distortion 2 im 3 2 f ifint = 240.0 mhz f ifin2 = 240.4 mhz p ifin = - 20 dbm f rfout = 1.9 ghz - 30 - 28 dbc ssb noise figure ssbnf f rfout = 0.9 ghz, f ifin = 240 mhz 8.5 8.5 db rise time t ps(rise) v ps : gnd ? v cc 2.0 2.0 m s power save response time fall time t ps(fall) v ps : v cc ? gnd 2.0 2.0 m s application circuit example charactersistics for reference purpose only (t a = +25 c, v cc = v ps = v rfout = 3.0 v, f ifin = 130 mhz, f loin = 1630 mhz, p loin = - - - - 5 dbm) reference value parameter symbol conditions m pc8106tb unit conversion gain cg f rfout = 1.5 ghz, with application circuit example 7db maximum rf output power p o(sat) f rfout = 1.5 ghz, with application circuit example - 3.5 dbm
data sheet p12770ej2v0ds00 7 m m m m pc8106tb, m m m m pc8109tb test circuit 1 (rf = 900 mhz, for the m m m m pc8106tb and m m m m pc8109tb) c 1 100 pf 1 c 2 100 pf 2 3 spectrum analyzer 1 000 pf 1 pf c 5 c 6 c 4 1 000 pf 6.8 nh 6 5 4 v cc rfoutput ps ifinput gnd loinput 50 w p loin = e5 dbm rf = 900 mhz, matched v cc * c 3 signal generator 50 w signal generator 50 w 10 000 pf l * in case of unstable operation, please connect capacitor 100 pf between 4 pin and 5 pin and adjust the matching circuit. example of test circuit 1 assembled on evaluation board if in pc8106tb lo in p/s 1 000 pf c 6 c 3 6.8 nh m 1 pf c 5 1 000 pf 100 pf c 1 1 c 4 10 000 pf 100 pf c 2 rf connector ? 1 000 pf l rf out
data sheet p12770ej2v0ds00 8 m m m m pc8106tb, m m m m pc8109tb component list form symbol value c 1 , c 2 100 pf c 3 , c 6 1 000 pf chip capacitor c 5 1 pf through capacitor c 4 10 000 pf chip inductor l 6.8 nh note note 6.8 nh: murata mfg. co., ltd. lqp31a6n8j04 notes on the board 1. 35 42 0.4 mm polyimide board, 35 m m double-sided copper clad 2. ground pattern on rear of the board 3. solder plated patterns 4. : through holes 5. c 6 is for rf short on the board pattern
data sheet p12770ej2v0ds00 9 m m m m pc8106tb, m m m m pc8109tb test circuit 2 (rf = 1.9 ghz, for the m m m m pc8106tb and m m m m pc8109tb) c 1 100 pf 1 c 2 100 pf 2 3 1 000 pf c 5 c 6 10 000 pf c 4 c 3 1 000 pf 100 nh 6 5 4 v cc rfoutput ps ifinput gnd loinput p loin = ? dbm 2.5 pf rf = 1.9 ghz, matched strip line v cc * spectrum analyzer 50 w signal generator 50 w signal generator 50 w l * in case of unstable operation, please connect capacitor 100 pf between 4 pin and 5 pin and adjust the matching circuit. example of test circuit 2 assembled on evaluation board if in pc8106tb lo in p/s c 6 c 3 m c 5 1 000 pf 1 000 pf 100 pf c 1 1 c 4 10 000 pf 100 pf c 2 rf connector 1 000 pf 0.5 pf 2 pf rf out 100 nh
data sheet p12770ej2v0ds00 10 m m m m pc8106tb, m m m m pc8109tb component list form symbol value c 1 , c 2 100 pf c 3 , c 6 1 000 pf chip capacitor c 5 2.5 pf (2.0 pf, 0.5 pf parallel) through capacitor c 4 10 000 pf chip inductor l 100 nh note note 100 nh: murata mfg. co., ltd. lqn1ar10j(k)04 notes on the board 1. 35 42 0.4 mm polyimide board, 35 m m double-sided copper clad 2. ground pattern on rear of the board 3. solder plated patterns 4. : through holes
data sheet p12770ej2v0ds00 11 m m m m pc8106tb, m m m m pc8109tb application circuit example (rf = 1.5 ghz, for the m m m m pc8106tb and m m m m pc8109tb) c 1 100 pf 1 c 2 100 pf 2 3 6 pf c 5 c 6 10 000 pf c 4 c 3 1 000 pf 150 nh 6 5 4 v cc rfoutput ps ifinput gnd loinput p loin = ? dbm 3.5 pf rf = 1.5 ghz, matched 2.7 nh v cc * spectrum analyzer 50 w signal generator 50 w signal generator 50 w l 1 l 2 * in case of unstable operation, please connect capacitor 100 pf between 4 pin and 5 pin and adjust the matching circuit. example of application circuit assembled on evaluation board if in pc8106tb lo in p/s c 6 c 3 m c 5 1 000 pf 6 pf 100 pf c 1 1 c 4 10 000 pf 100 pf c 2 rf connector 1 000 pf 0.5 pf 3 pf rf out 150 nh 2.7 nh l 1 l 2
data sheet p12770ej2v0ds00 12 m m m m pc8106tb, m m m m pc8109tb component list form symbol value c 1 , c 2 100 pf c 3 1 000 pf c 5 3.5 pf (3.0 pf, 0.5 pf parallel) chip capacitor c 6 6 pf through capacitor c 4 10 000 pf l 1 150 nh note 1 chip inductor l 2 2.7 nh note 2 notes 1. 150 nh: toko co., ltd. ll2012-fr15 2. 2.7 nh : toko co., ltd. ll2012-f2n7s notes on the board 1. 35 42 0.4 mm polyimide board, 35 m m double-sided copper clad 2. ground pattern on rear of the board 3. solder plated patterns 4. : through holes notice the test circuits and board pattern on data sheet are for performance evaluation use only. (they are not recommended circuits.) in the case of actual design-in, matching circuit should be determined using s parameter of desired frequency in accordance to actual mounting pattern. for external circuits of the ics, following application note is also available. ? m pc8106, m pc8109 application note (document no. p13683e)
data sheet p12770ej2v0ds00 13 m m m m pc8106tb, m m m m pc8109tb typical characteristics (t a = +25c, v cc = v rfout ) with test circuit 1 or 2, according to the operating frequency, unless otherwise specified circuit current vs. supply voltage ( pc8106tb) m 0 0 2 4 6 8 10 12 14 24 3 16 58 7 supply voltage v cc (v) no signal v cc = v ps circuit current i cc (ma) circuit current vs. supply voltage ( pc8109tb) m 0 0 2 4 6 8 10 24 3 16 58 7 supply voltage v cc (v) no signal v cc = v ps circuit current i cc (ma) v cc = 5.5 v v cc = 3.0 v circuit current vs. ps pin input voltage ( pc8106tb) m 0 0 2 4 6 8 10 12 3 2 15 46 ps pin input voltage v ps (v) circuit current i cc (ma) v cc = 5.5 v v cc = 3.0 v circuit current vs. ps pin input voltage ( pc8109tb) m 0 0 2 4 6 8 10 3 2 15 46 ps pin input voltage v ps (v) circuit current i cc (ma) circuit current vs. operating ambient temperature ( pc8106tb) m e60 0 2 4 6 8 10 12 14 16 0 e20 e40 40 20 100 80 60 operating ambient temperature t a (?c) circuit current i cc (ma) no signal v cc = v ps = 3.0 v circuit current vs. operating ambient temperature ( pc8109tb) m e60 0 2 4 6 8 10 0 e20 e40 40 20 100 80 60 operating ambient temperature t a (?c) circuit current i cc (ma) no signal v cc = v ps = 3.0 v
data sheet p12770ej2v0ds00 14 m m m m pc8106tb, m m m m pc8109tb s-parameters for each port (v cc = v ps = v rfout = 3.0 v) C m m m m pc8106tb, m m m m pc8109tb in common C (the parameters are monitored at dut pins.) 1 2 1 2 1 marker 1 1.15 ghz marker 2 1.65 ghz lo port marker 1 900 mhz marker 2 1.9 ghz rf port marker 1 240 mhz if port start 0.4 ghz start 0.4 ghz stop 1.9 ghz stop 1.9 ghz start 0.1 ghz stop 0.4 ghz s 11 z ref 1.0 units 2 200.0 munits/ 21.201 w e53.748 w hp s 22 z ref 1.0 units 2 200.0 munits/ 26.961 w e87.312 w hp s 11 z ref 1.0 units 1 200.0 munits/ 194.16 w e579.53 w hp
data sheet p12770ej2v0ds00 15 m m m m pc8106tb, m m m m pc8109tb s-parameters for matched rf output (v cc = v ps = v rfout = 3.0 v) C with test circuits 1 and 2 ( m m m m pc8106tb, m m m m pc8109tb in common) C (s 22 data are monitored at rf connector on board.) 1 1 start 100 mhz start 100 mhz stop 3 000 mhz stop 3 000 mhz 900 mhz (lc-matched) in test circuit 1 s 22 log mag ref 0.0 db 1 10.0 db/ e19.567 db hp start 100 mhz stop 3 000 mhz start 100 mhz stop 3 000 mhz marker 1 900 mhz marker 1 1.9 ghz marker 1 1.9 ghz marker 1 900 mhz 1 1.9 ghz (matched) in test circuit 2 s 22 log mag ref 0.0 db 1 10.0 db/ e15.213 db hp 1 1 s 22 ref 1.0 units 1 200.0 munits/ 36.59 w 2.9355 w hp s 22 ref 1.0 units 1 200.0 munits/ 58.191 w e4.1191 w hp
data sheet p12770ej2v0ds00 16 m m m m pc8106tb, m m m m pc8109tb s-parameters for matched rf output (v cc = v ps = v rfout = 3.0 v) C with application circuit example C (s 22 data are monitored at rf connector on board.) 1 start 1.0 ghz stop 2.0 ghz 1.5 ghz (matched) in application circuit example s 22 log mag ref 0.0 db 1 10.0 db/ e20.901 db hp start 1.0 ghz stop 2.0 ghz marker 1 1.5 ghz marker 1 1.5 ghz c d c d s 22 z ref 1.0 units 1 200.0 munits/ 59.086 w e3.873 w hp 1
data sheet p12770ej2v0ds00 17 m m m m pc8106tb, m m m m pc8109tb conversion gain vs. supply voltage ( pc8106tb) m 2 4 5 6 7 8 9 10 11 12 34 5 6 supply voltage v cc (v) v cc = v ps conversion gain cg (db) conversion gain vs. supply voltage ( pc8109tb) m 2 0 2 4 6 8 10 34 5 6 supply voltage v cc (v) v cc = v ps conversion gain cg (db) conversion gain vs. local input level ( pc8106tb) m ?5 0 3 6 9 12 15 ? 0 5 10 15 ?0 ?5 ?0 local input level p loin (dbm) conversion gain cg (db) f rfout = 900 mhz f rfout = 1.9 ghz f rfout = 900 mhz f rfout = 1.9 ghz f rfout = 900 mhz f loin = 1140 mhz v cc = v ps = 3.0 v conversion gain vs. local input level ( pc8106tb) m ?5 ?0 ? 0 5 10 15 ? 0 5 10 15 ?0 ?5 ?0 local input level p loin (dbm) conversion gain cg (db) f rfout = 1.9 ghz f loin = 1.66 ghz v cc = v ps = 3.0 v conversion gain vs. local input level ( pc8109tb) m ?5 ?0 ? 0 5 10 15 ? 0 5 10 15 ?0 ?5 ?0 local input level p loin (dbm) conversion gain cg (db) f rfout = 1.9 ghz f loin = 1.66 ghz v cc = v ps = 3.0 v conversion gain vs. local input level ( pc8109tb) m ?5 0 3 6 9 12 15 ? 0 5 10 15 ?0 ?5 ?0 local input level p loin (dbm) conversion gain cg (db) f rfout = 900 mhz f loin = 1140 mhz v cc = v ps = 3.0 v
data sheet p12770ej2v0ds00 18 m m m m pc8106tb, m m m m pc8109tb rf output level and im 3 vs. if input level ( pc8106tb) m e40 e80 e70 e60 e50 e40 e30 e10 e20 0 10 e20 e30 e10 10 0 rf output level of each tone p rfout (dbm) third order intermodulation distortion im 3 (dbm) f rfout = 900 mhz f lfin1 = 240 mhz f lfin2 = 240.4 mhz f loin = 1440 mhz p loin = e5 dbm v cc = v ps = 3.0 v p out im 3 rf output level and im 3 vs. if input level ( pc8109tb) m e40 e80 e70 e60 e50 e40 e30 e10 e20 0 10 e20 e30 e10 10 0 if input level p ifin (dbm) rf output level of each tone p rfout (dbm) third order intermodulation distortion im 3 (dbm) f rfout = 900 mhz f lfin1 = 240 mhz f lfin2 = 240.4 mhz f loin = 1440 mhz p loin = e5 dbm v cc = v ps = 3.0 v p out im 3 rf output level and im 3 vs. if input level ( pc8109tb) m e40 e80 e70 e60 e50 e40 e30 e10 e20 0 10 e20 e30 e10 10 0 if input level p ifin (dbm) rf output level of each tone p rfout (dbm) third order intermodulation distortion im 3 (dbm) f rfout = 1.9 ghz f lfin1 = 240 mhz f lfin2 = 240.4 mhz f loin = 1660 mhz p loin = e5 dbm v cc = v ps = 3.0 v p out im 3 if input level p ifin (dbm) rf output level and im 3 vs. if input level ( pc8106tb) m e40 e80 e70 e60 e50 e40 e30 e10 e20 0 10 e20 e30 e10 10 0 rf output level of each tone p rfout (dbm) third order intermodulation distortion im 3 (dbm) f rfout = 1.9 ghz f lfin1 = 240 mhz f lfin2 = 240.4 mhz f loin = 1660 mhz p loin = e5 dbm v cc = v ps = 3.0 v p out im 3 if input level p ifin (dbm) rf output level and im 3 vs. if input level ( pc8109tb) m e40 e80 e70 e60 e50 e40 e30 e10 e20 0 10 e20 e30 e10 10 0 if input level p ifin (dbm) rf output level of each tone p rfout (dbm) third order intermodulation distortion im 3 (dbm) f rfout = 1.5 ghz f lfin1 = 130 mhz f lfin2 = 130.4 mhz f loin = 1630 mhz p loin = e5 dbm v cc = v ps = 3.0 v p out im 3 rf output level and im 3 vs. if input level ( pc8106tb) m e80 e70 e60 e50 e40 e30 e10 e20 0 10 e40 e20 e30 e10 10 0 rf output level of each tone p rfout (dbm) third order intermodulation distortion im 3 (dbm) f rfout = 1.5 ghz f lfin1 = 130 mhz f lfin2 = 130.4 mhz f loin = 1630 mhz p loin = e5 dbm v cc = v ps = 3.0 v p out im 3 if input level p ifin (dbm)
data sheet p12770ej2v0ds00 19 m m m m pc8106tb, m m m m pc8109tb local leakage at if pin vs. local input frequency ( pc8106tb) m 0 e50 e40 e30 e20 e10 0 1.5 2 2.5 3 3.5 0.5 1 local input frequency f loin (gh z ) local leakage at if pin lo if (dbm) f rfout = 1.9 ghz p loin = e5 dbm v cc = v ps = 3.0 v if leakage at rf pin vs. if input frequency ( pc8106tb) m 0 e50 e40 e30 e20 e10 0 300 400 500 600 100 200 if input frequency f ifin (mh z ) if leakage at rf pin if rf (dbm) f rfout = 1.9 ghz f loin = 1.66 ghz p loin = e5 dbm f ifin = e30 dbm v cc = v ps = 3.0 v local leakage at rf pin vs. local input frequency ( pc8106tb) m 0 e50 e40 e30 e20 e10 0 1.5 2 2.5 3 3.5 0.5 1 local input frequency f loin (gh z ) local leakage at rf pin lo rf (dbm) f rfout = 1.9 ghz p loin = e5 dbm v cc = v ps = 3.0 v
data sheet p12770ej2v0ds00 20 m m m m pc8106tb, m m m m pc8109tb package dimensions 6 pin super minimold (unit: mm) 1.25 0.1 2.1 0.1 0.65 0.65 1.3 2.0 0.2 0.1 min. 0.7 0.9 0.1 0 to 0.1 0.2 +0.1 e0 0.15 +0.1 e0
data sheet p12770ej2v0ds00 21 m m m m pc8106tb, m m m m pc8109tb notes on correct use (1) observe precutions for handling because of electrostatic sensitive devices. (2) form a ground pattern wide as possible to minimize ground impedance (to prevent undesired oscillation). (3) keep the wiring length of the ground pins as short as possible. (4) connect a bypass capacitor to the v cc pin. (5) connect a matching circuit to the rf output pin. recommended soldering conditions this product should be soldered under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235c or below time: 30 seconds or less (at 210c) count: 3, exposure limit: none note ir35-00-3 vps package peak temperature: 215c or below time: 40 seconds or less (at 200c) count: 3, exposure limit: none note vp15-00-3 wave soldering soldering bath temperature: 260c or below time: 10 seconds or less count: 1, exposure limit: none note ws60-00-1 partial heating pin temperature: 300c time: 3 seconds or less (per side of device) exposure limit: none note C note after opening the dry pack, keep it in a place below 25c and 65% rh for the allowable storage period. caution do not use different soldering methods together (except for partial heating). for details of recommended soldering conditions for surface mounting, refer to information document semiconductor device mounting technology manual (c10535e).
data sheet p12770ej2v0ds00 22 m m m m pc8106tb, m m m m pc8109tb [memo]
data sheet p12770ej2v0ds00 23 m m m m pc8106tb, m m m m pc8109tb [memo]
m m m m pc8106tb, m m m m pc8109tb attention observe precautions for handling electrostatic sensitive devices nesat (nec silicon advanced technology) is a trademark of nec corporation. ? the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. ? no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. ? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. ? descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. ? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ? nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8

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